Ultraviolet photodetectors and readout based on a‐IGZO semiconductor technology
نویسندگان
چکیده
In this work, real-time ultraviolet photodetectors are realized through metal–semiconductor–metal (MSM) structures. Amorphous indium gallium zinc oxide (a-IGZO) is used as semiconductor material and gold metal electrodes. The readout of an individual sensor implemented by a transimpedance amplifier (TIA) consisting all-enhancement a-IGZO thin-film transistor (TFT) operational switched capacitor (SC) feedback resistance. photosensor the both manufactured on glass substrates. measured possesses high responsivity R, low response time tRES, good noise equivalent power value NEP.
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Dedication To my parents, Gary and Carol, and to my loving girlfriend Connie. v Acknowledgements I would like to express my gratitude to my supervising, Professor Joe C. Campbell, for showing me the exciting world of nitride-based optoelectronic devices. His wise advice and constant support has been the most important aspect of my research, inspiring all of the work I have accomplished. Joe Cam...
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ژورنال
عنوان ژورنال: Journal of The Society for Information Display
سال: 2023
ISSN: ['1938-3657', '1071-0922']
DOI: https://doi.org/10.1002/jsid.1202